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ZXMN6A11Z
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Unit
V
V
Continuous Drain Current
Steady
State
@ V GS = 10V ; T A = 25°C (Note 5)
@ V GS = 10V ; T A = 75°C (Note 5)
@ V GS = 10V ; T A = 25°C (Note 4)
I D
3.6
2.9
2.7
A
Pulsed Drain Current (Note 6)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)
I DM
I S
I SM
14.5
3.7
14.5
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Linear Derating Factor
Power Dissipation (Note 5)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
T J , T STG
Value
1.5
12
2.6
21
83.3
47.4
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C
Notes:
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
5. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
6. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 μ s – pulse width limited by maximum junction temperature.
Thermal Characteristics
10
1
R DS(on)
Limited
DC
1s
1.50
1.25
1.00
0.75
100m
10m
Single Pulse
T amb =25°C
100ms
10ms
1ms
100μs
0.50
0.25
0
1 10
V DS Drain-Source Voltage (V)
Safe Operating Area
0.00
20
40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
90
80
70
60
50
40
T amb =25°C
D=0.5
100
10
Single Pulse
T amb =25°C
30
20
10
D=0.2
Single Pulse
D=0.05
D=0.1
100μ
100μ
0
1m
10m 100m
1
10
100
1k
1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ZXMN6A11Z
Document number DS33557 Rev. 4 - 2
2 of 7
www.diodes.com
December 2011
? Diodes Incorporated
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